JPH0314232B2 - - Google Patents
Info
- Publication number
- JPH0314232B2 JPH0314232B2 JP60049359A JP4935985A JPH0314232B2 JP H0314232 B2 JPH0314232 B2 JP H0314232B2 JP 60049359 A JP60049359 A JP 60049359A JP 4935985 A JP4935985 A JP 4935985A JP H0314232 B2 JPH0314232 B2 JP H0314232B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- substrate
- well
- conductivity type
- parasitic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60049359A JPS61208863A (ja) | 1985-03-14 | 1985-03-14 | Cmos半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60049359A JPS61208863A (ja) | 1985-03-14 | 1985-03-14 | Cmos半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61208863A JPS61208863A (ja) | 1986-09-17 |
JPH0314232B2 true JPH0314232B2 (en]) | 1991-02-26 |
Family
ID=12828821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60049359A Granted JPS61208863A (ja) | 1985-03-14 | 1985-03-14 | Cmos半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61208863A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0131373B1 (ko) * | 1994-06-15 | 1998-04-15 | 김주용 | 반도체 소자의 데이터 출력버퍼 |
JPH08330431A (ja) * | 1995-05-31 | 1996-12-13 | Nec Corp | 半導体集積回路 |
-
1985
- 1985-03-14 JP JP60049359A patent/JPS61208863A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS61208863A (ja) | 1986-09-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5376816A (en) | Bi-cmos integrated circuit device having buried region use in common for bipolar and mos transistors | |
JPH0654797B2 (ja) | Cmos半導体装置 | |
JP2954854B2 (ja) | 集積回路チップ | |
US7456440B2 (en) | Electrostatic protection device | |
US5969391A (en) | Complementary insulated-gate field-effect transistors having improved anti-latchup characteristic | |
JPH0318347B2 (en]) | ||
JP2602974B2 (ja) | Cmos半導体集積回路装置 | |
JP4460272B2 (ja) | パワートランジスタおよびそれを用いた半導体集積回路 | |
US6084272A (en) | Electrostatic discharge protective circuit for semiconductor device | |
JPH0314232B2 (en]) | ||
JPH044755B2 (en]) | ||
JPS6362904B2 (en]) | ||
JP2680848B2 (ja) | 半導体記憶装置 | |
JPH04312968A (ja) | Cmos半導体集積回路装置 | |
JPS5944782B2 (ja) | 半導体集積回路 | |
JPH0412627B2 (en]) | ||
JPH08222640A (ja) | 半導体集積回路装置 | |
JPH0636596Y2 (ja) | Cmos半導体装置 | |
JPS61280650A (ja) | 入力回路 | |
JP3038744B2 (ja) | Cmos型半導体集積回路装置 | |
JPH11135645A (ja) | 半導体集積回路装置 | |
JPH01273346A (ja) | 半導体装置 | |
JPH09191054A (ja) | Cmosトランジスタ | |
JPS59200459A (ja) | 相補型半導体装置及びその製造方法 | |
JPH04207068A (ja) | 複合型半導体装置 |